2SA636

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA636 2SA636A DESCRIPTION ·With TO-202 package ·Complement to type 2SC1098/1098A ·High breakdown voltage ·High transition frequency APPLICATIONS ·For audio frequency power amplifier and low speed switching applications PINNING(see Fig.2) PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-202) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SA636 VCEO Collector-emitter voltage 2SA636A VEBO IC ICM IB Emitter-base voltage Collector current Collector current-peak Base current TC=25 PT Total power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.2 150 -55~150 Open collector Open base -60 -5 -3 -5 -0.6 10 W V A A A CONDITIONS Open emitter VALUE -70 -45 V UNIT V SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-1.5A ;IB=-0.15A IC=-1.5A ;IB=-0.15A VCB=-45V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-0.5A ; VCE=-5V IE=0; VCB=-10V;f=1MHz IC=-0.1A ; VCB=-5V 2SA636 2SA636A SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT MIN TYP. -0.5 -0.8 MAX -2.0 -2.0 -1 -1 UNIT V V µA µA 20 40 60 45 250 pF MHz hFE-2 classifications N 40-60 M 50-100 L 80-160 K 120-250 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA636 2SA636A Fig.2 outline dimensions 3