2SA757

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA757 DESCRIPTION ·With TO-3 package ·Complement to type 2SC897 APPLICATIONS ·For audio amplifier power output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -120 -100 -6 -7 -12 60 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SA757 SYMBOL MAX UNIT V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT Collector-emitter breakdown voltage IC=-50mA ;RBE=9 IC=-5mA ,IE=0 IE=-5mA ,IC=0 IC=-5A; IB=-1A IC=-1A ; VCE=-5V VCB=-30V; IE=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-5V -100 V Collector-base breakdown voltage -120 V Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -1.8 V Base-emitter on voltage -1.5 V Collector cut-off current -1 mA DC current gain 25 200 DC current gain 20 Transition frequency 24 MHz hFE-1 Classifications A 25-60 B 50-120 C 100-200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA757 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3