2SA765

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA765 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -80 -80 -6 -6 40 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SA765 SYMBOL MAX UNIT V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE fT Collector-emitter breakdown voltage IC=-10mA ;IB=0 IC=-1mA ;IE=0 IC=-4A; IB=-0.4A IC=-4A; IB=-0.4A VCB=-80V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-4V IC=-0.5A ; VCE=-12V -80 V Collector-base breakdown voltage -80 V Collector-emitter saturation voltage -1.5 V Base-emitter saturation voltage -2.0 V Collector cut-off current -10 µA Emitter cut-off current -10 µA DC current gain 50 Transition frequency 10 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA765 Fig.2 outline dimensions 3