2SA769

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA769 DESCRIPTION ·With TO-220 package ·Complement to type 2SC1827 APPLICATIONS ·For low frequency power amplifier applicattions PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -80 -80 -5 -4 30 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-25mA ,IB=0 IC=-1mA ,IE=0 IC=-3A; IB=-0.3A IC=-3A; IB=-0.3A VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-0.5A ; VCE=-10V 60 10 MIN -80 -80 TYP. 2SA769 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE fT MAX UNIT V V -1.0 -1.5 -10 -10 240 V V µA µA MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA769 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3