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2SA900

2SA900

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2SA900 - Silicon PNP Power Transistors - Savantic, Inc.

  • 数据手册
  • 价格&库存
2SA900 数据手册
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA900 DESCRIPTION ·With TO-126 package ·Complement to type 2SC1568 ·Low collector saturation voltage APPLICATIONS ·For audio frequency power amplifier PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute Maximun Ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -20 -18 -5 -1 -2 1.2 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA;IB=0 IC=-10µA ;IE=0 IE=-10µA ;IC=0 IC=-1A ;IB=-50mA IC=-500mA ;IB=-50mA VCB=-10V; IE=0 VCE=-18V; IB=0 IC=-500mA ; VCE=-2V IC=-1.5A ; VCE=-2V IE=0 ; VCB=-6V;f=1MHz IE=50mA ; VCB=-6V 90 50 40 200 MIN -18 -20 -5 2SA900 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO ICEO hFE-1 hFE-2 COB fT TYP. MAX UNIT V V V -0.5 -1.2 -1 -10 470 V V µA µA pF MHz hFE-1 Classifications Q 90-155 R 130-210 S 180-280 T 250-360 U 330-470 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA900 Fig.2 Outline dimensions 3
2SA900 价格&库存

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