2SA914

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA914 DESCRIPTION ·With TO-126 package ·Complement to type 2SC1953 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency power pre-amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute Maximun Ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -50 -100 1 150 -55~150 UNIT V V V mA mA W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-0.1mA;IB=0 IE=-10µA ;IC=0 IC=-30mA ;IB=-3mA VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-10mA ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IE=10mA ; VCB=-10V 90 MIN -150 -5 2SA914 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V V -1.0 -1 -1 450 5 200 V µA µA pF MHz hFE Classifications Q 90-155 R 130-220 S 185-330 T 260-450 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA914 Fig.2 Outline dimensions 3