2SA940

2SA940

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2SA940 - Silicon PNP Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2SA940 数据手册
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA940 DESCRIPTION ·With TO-220 package ·Complement to type 2SC2073 APPLICATIONS ·Power amplifier applications ·Vertical output applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -1.5 -0.5 1.5 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-0.5A; IB=-50m A IC=-0.5A ; VCE=-10V IC=-1mA; IE=0 IC=-5mA; IB=0 IE=-1mA; IC=0 VCB=-120V;IE=0 VEB=-5V; IC=0 IC=-0.5A ; VCE=-10V IE=0; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-10V 40 55 4 -150 -150 -5 MIN TYP. 2SA940 SYMBOL VCEsat VBE V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE COB fT MAX -1.5 UNIT V V V V V -0.75 -0.85 -10 -10 140 µA µA pF MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA940 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA940 4
2SA940
1. 物料型号: - 型号为2SA940,是SavantIC Semiconductor生产的Silicon PNP Power Transistors。

2. 器件简介: - 该器件为硅PNP功率晶体管,采用TO-220封装,是2SC2073型号的补充。

3. 引脚分配: - PIN 1: 发射极(Emitter) - PIN 2: 集电极,连接到安装底座(Collector;connected to mounting base) - PIN 3: 基极(Base)

4. 参数特性: - 绝对最大额定值: - VCBO:集电极-基极电压(开路发射极)-150V - VCEO:集电极-发射极电压(开路基极)-150V - VEBO:发射极-基极电压(开路集电极)-5V - Ic:集电极电流(DC)-1.5A - IB:基极电流-0.5A - Pc:集电极功率耗散1.5W(T=25°C) - Tj:结温150°C - Tstg:存储温度-55~150°C

5. 功能详解: - 特性参数: - VCEsat:集电极-发射极饱和电压(Ic=-0.5A; IB=-50mA)-1.5V - VBE:基极-发射极导通电压(Ic=-0.5A; VcE=-10V)-0.75~-0.85V - V(BR)CBO:集电极-基极击穿电压(Ic=-1mA;le=0)-150V - V(BR)CEO:集电极-发射极击穿电压(Ic=-5mA;lB=0)-150V - V(BR)EBO:发射极-基极击穿电压(le=-1mA;lc=0)-5V - ICBO:集电极截止电流(VcB=-120V;lE=0)-10A - IEBO:发射极截止电流(VEB=-5V; Ic=0)-10A - hFE:直流电流增益(Ic=-0.5A; VcE=-10V)40~140 - CoB:输出电容(lE=0;VcB=-10V;f=1MHz)55pF - fr:转换频率(Ic=-0.5A;VcE=-10V)4MHz

6. 应用信息: - 适用于功率放大器应用和垂直输出应用。

7. 封装信息: - 封装类型为TO-220,具体尺寸见图2,未标注的公差为±0.10mm。
2SA940 价格&库存

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