2SA963

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA963 DESCRIPTION ·With TO-126 package ·Complement to type 2SC2209 ·High collector power dissipation APPLICATIONS ·For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute Maximun Ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -50 -40 -5 -1.5 -3 10 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-2mA;IB=0 IC=-1mA ;IE=0 IC=-1.5A ;IB=-150mA IC=-2A ;IB=-0.2A VCB=-20V; IE=0 VCE=-10V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IE=0 ; VCB=-5V;f=1MHz IE=0.5A ; VCB=-5V,f=200MHz 80 70 150 MIN -40 -50 2SA963 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO ICEO IEBO hFE COB fT TYP. MAX UNIT V V -1.0 -1.5 -1 -100 -10 220 V V µA µA µA pF MHz hFE Classifications Q 80-160 R 120-220 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA963 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA963 4