2SB1020

2SB1020

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2SB1020 - Silicon PNP Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2SB1020 数据手册
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1020 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SD1415 APPLICATIONS ·High power switching applications ·Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -5 -7 -0.2 30 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1020 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-50mA; IB=0 IC=-3A ;IB=-6mA IC=-7A ;IB=-14mA IC=-3A ;IB=-6mA VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-3A ; VCE=-3V IC=-7A ; VCE=-3V 2000 1000 MIN -100 -0.95 -1.3 -1.55 -1.5 -2.0 -2.5 -100 -4.0 15000 TYP. MAX UNIT V V V V µA mA SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBEsat ICBO IEBO hFE-1 hFE-2 Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=-6mA VCC=-45V ,RL=15? 0.8 2.0 2.5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1020 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3
2SB1020
物料型号: - 型号:2SB1020

器件简介: - 该晶体管采用TO-220Fa封装,具有高直流电流增益、低饱和电压,是2SD1415型号的互补类型。 - 适用于高功率开关应用和锤击驱动、脉冲电机驱动应用。

引脚分配: - 1号引脚:基极(Base) - 2号引脚:集电极(Collector) - 3号引脚:发射极(Emitter)

参数特性: - 集电极-基极电压(VCBO):-100V - 集电极-发射极电压(VCEO):-100V - 发射极-基极电压(VEBO):-5V - 集电极电流(IC):-7A - 基极电流(IB):-0.2A - 集电极功耗(PC):30W - 结温(Tj):150°C - 存储温度(Tstg):-55~150°C

功能详解: - 该晶体管的主要特性包括集电极-发射极击穿电压、集电极-发射极饱和电压、基极-发射极饱和电压、集电极截止电流、发射极截止电流、直流电流增益等。 - 还提供了开关时间参数,包括开通时间(ton)、存储时间(tstg)和下降时间(t)。

应用信息: - 适用于高功率开关应用和锤击驱动、脉冲电机驱动应用。

封装信息: - 提供了TO-220Fa封装的外形尺寸图,未标明的公差为±0.15mm。
2SB1020 价格&库存

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