2SB1024

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1024 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·Complement to type 2SD1414 APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -80 -5 -4 -0.5 20 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1024 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA; IB=0 IC=-3A ;IB=-6mA IC=-3A ;IB=-6mA VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-2V IC=-3A ; VCE=-2V 2000 1000 MIN -80 -1.5 -2.0 -20 -2.5 TYP. MAX UNIT V V V µA mA SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Switching times ton tstg tf Turn-on time Storage time Fall time IB1=-IB2=-6mA VCC=-30V ,RL=10= 0.15 0.80 0.40 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1024 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3