2SB1054

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1054 · DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1485 ·High transition frequency ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -5 -5 -8 60 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-3A ;IB=-0.3A IC=-3A ; VCE=-5V VCB=-100V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-3A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 20 40 20 MIN 2SB1054 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT TYP. MAX -2.0 -1.8 -50 -50 UNIT V V µA µA 200 170 20 pF MHz hFE-2 classifications R 40-80 Q 60-120 P 100-200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1054 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3