2SB1055

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1486 ·High fT ·Satisfactory linearity of hFE ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SB1055 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -5 -6 -10 70 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-4A ;IB=-0.4A IC=-4A ; VCE=-5V VCB=-120V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 20 40 20 MIN SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE -2 hFE -3 COB fT 2SB1055 TYP. MAX -2.0 -1.8 -50 -50 UNIT V V µA µA 200 230 20 pF MHz hFE-2 classifications R 40-80 Q 60-120 P 100-200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1055 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1055 4