2SB1065

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1065 DESCRIPTION ·With TO-126 package ·Complement to type 2SD1506 ·Low collector saturation voltage APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -5 -3 -4.5 10 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ,IB=0 IC=-50µA ,IE=0 IE=-50µA ,IC=0 IC=-2A; IB=-0.2A IC=-2A; IB=-0.2A VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-0.5A ; VCE=-3V IE=0 ; VCB=-10V,f=1MHz IC=-0.5A ; VCE=-5V 56 MIN -50 -60 -5 2SB1065 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V V V -1.0 -1.5 -1.0 -1.0 390 50 70 V V µA µA pF MHz hFE Classifications N 56-120 P 82-180 Q 120-270 R 180-390 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1065 Fig.2 Outline dimensions 3