2SB1086

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type 2SD1563 ·Low collector saturation voltage ·Large current capability APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2SB1086 Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current -peak Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -1.5 -3.0 10 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SB1086 SYMBOL TYP. MAX UNIT V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB Collector-emitter breakdown voltage IC=-1mA ;IB=0 IC=-50µA ;IE=0 IE=-50µA ;IC=0 IC=-1.0A ;IB=-0.1A IC=-1.0A ;IB=-0.1A VCB=-100V; IE=0 VEB=-4V; IC=0 IC=-0.1A ; VCE=-5V IC=-0.1A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz -120 V Collector-base breakdown voltage -120 V Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -2.0 V Base-emitter saturation voltage -1.5 V Collector cut-off current -1.0 µA Emitter cut-off current -1.0 µA DC current gain 56 390 Transition frequency 50 MHz Output capacitance 30 pF 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1086 Fig.2 Outline dimensions 3