2SB1106

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1106 DESCRIPTION ·With TO-220C package ·DARLINGTON ·High DC durrent gain ·Complement to type 2SD1606 APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -7 -6 40 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Diode forward voltage CONDITIONS IC=-25mA, RBE== IE=-50mA, IC=0 IC=-3A ,IB=-6mA IC=-6A ,IB=-60mA IC=-3A ,IB=-6mA IC=-6A ,IB=-60mA VCB=-120V, IE=0 VCE=-100V, RBE== IC=-3A ; VCE=-3V ID=-6A 1000 MIN -120 -7 2SB1106 SYMBOL V(BR)CEO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE VD TYP. MAX UNIT V V -1.5 -3.0 -2.0 -3.5 -100 -10 V V V V µA µA 3.0 V 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1106 Fig.2 Outline dimensions 3