2SB1133

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SD1666 ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·For low-frequency and general-purpose amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SB1133 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -40~150 Open emitter Open base Open collector CONDITIONS MAX -60 -60 -6 -3 -8 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-5mA ;RBE=; IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-2A; IB=-0.2A IC=-0.5A ; VCE=-5V VCB=-40V ;IE=0 VEB=-4V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IE=0 ; VCB=-10V; f=1MHz IC=-0.5A ; VCE=-5V 70 20 MIN -60 -60 -6 2SB1133 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT TYP. MAX UNIT V V V -1.0 -1.0 -100 -100 280 V V µA µA 110 40 pF MHz hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1133 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1133 4