2SB1149

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1149 DESCRIPTION ·With TO-126 package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Ta=25 PD Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 15 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -8 -3.0 -5.0 1.3 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-1.5A ;IB=-1.5mA IC=-1.5A ;IB=-1.5mA VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1.5A ; VCE=-2V IC=-3A ; VCE=-2V 2000 1000 MIN 2SB1149 SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. -0.9 -1.5 MAX -1.2 -2.0 -10 -2.0 15000 UNIT V V µA mA Switching times ton tstg tf Turn-on time Storage time Fall time IC=-1.5A ; IB1=-IB2=-1.5mA VCC?-40V;RL=27B 0.5 2.0 1.0 µs µs µs hFE-1 Classifications M 2000-5000 L 3000-7000 K 5000-15000 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1149 Fig.2 Outline dimensions 3