2SB1163

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1163 DESCRIPTION ·With TO-3PL package ·Complement to type 2SD1718 ·Excellent linearity of hFE ·Wide area of safe operation (ASO) ·High transition frequency fT APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Open emitter Open base Open collector CONDITIONS VALUE -180 -180 -5 -15 -25 3.5 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 150 150 -55~150 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-10A ;IB=-1A IC=-8A ; VCE=-5V VCB=-180V; IE=0 VEB=-3V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IC=-8A ; VCE=-5V IC=-0.5A ; VCE=-5V f=1MHz;VCB=-10V 20 60 20 20 230 MIN 2SB1163 SYMBOL VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB TYP. MAX -2.5 -1.8 -50 -50 UNIT V V µA µA 200 MHz pF hFE-2 classifications Q 60-100 S 80-160 P 100-200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1163 Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3