2SB1193

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1193 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·High speed switching ·DARLINGTON ·Complement to type 2SD1773 APPLICATIONS ·For medium speed switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 50 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -7 -8 -12 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1193 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain CONDITIONS IC=-2A; RBE=