2SB1227

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1227 DESCRIPTION ·With TO-220F package ·Complement to type 2SD1829 ·High DC current gain. ·Large current capacity and wide ASO. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·Suitable for use in control of motor drivers, printer hammer drivers,relay drivers,and constant-voltage regulators. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -110 -100 -6 -5 -8 25 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-5mA; IE=0 IC=-50mA; RBE=? IC=-2.5A ; IB=-5mA IC=-2.5A ; IB=-5mA VCB=-80V;IE=0 VEB=-5V;IC=0 IC=-2.5A ; VCE=-3V IC=-2.5A ; VCE=-5V 1500 MIN -110 -100 2SB1227 SYMBOL V(BR)CBO V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V -1.0 -1.5 -2.0 -0.1 -3.0 V V mA mA 4000 20 MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=500IB1=-500IB2=-2A VCC=-50V ,RL=25E 0.7 1.3 1.5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1227 Fig.2 Outline dimensions 3