2SB1273

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1273 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -6 -3 -8 30 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-5mA ,RBE=: IC=-1mA ,IE=0 IE=-1mA ,IC=0 IC=-2A; IB=-0.2A IC=-0.5A ; VCE=-5V VCB=-40V; IE=0 VEB=-4V; IC=0 IC=-0.5A ; VCE=-5V IC=-3A ; VCE=-5V IE=0 ; VCB=-10V,f=1MHz IC=-0.5A ; VCE=-5V 70 20 MIN -60 -60 -6 2SB1273 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT TYP. MAX UNIT V V V -0.4 -0.8 -1.0 -1.0 -100 -100 280 V V µA µA 60 100 pF MHz hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1273 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3