2SB1315

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1315 DESCRIPTION ·With TO-3PML package ·Low collector saturation voltage APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 65 150 -55~150 CONDITIONS Open emitter Open base Open collector MAX -120 -120 -5 -8 3.5 W UNIT V V V A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IE=-1mA ;IC=0 IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-1A ; VCE=-5V f=1MHz;VCB=-10V 60 MIN -120 -5 2SB1315 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V V -1.5 -2.0 -50 -50 320 65 200 V V µA µA MHz pF 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1315 Fig.2 outline dimensions 3