2SB1339

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1339 DESCRIPTION ·With TO-220C package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For low frequency power amplifier and power driver applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -120 -120 -6 -6 -10 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=-5mA; IB=0 IC=-50µA; IE=0 IC=-3A ;IB=-6mA VCB=-120V; IE=0 VEB=-5V; IC=0 IC=-2A ; VCE=-3V IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz 2000 MIN -120 -120 2SB1339 SYMBOL V(BR)CEO V(BR)CBO VCEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V V -1.5 -100 -3.0 20000 12 70 V µA mA MHz pF 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1339 Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm) 3