2SB1389

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1389 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -60 -60 -7 -4 -8 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1389 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current DC current gain Diode forward voltage CONDITIONS IC=-25mA; RBE=? IC=-100µA; IE=0 IE=-50mA; IC=0 IC=-2A ;IB=-4mA IC=-4A ;IB=-40mA IC=-2A ;IB=-4mA IC=-4A ;IB=-40mA VCB=-50V; IE=0 VCE=-50V; RBE=? IC=-2A ; VCE=-3V ID=4A 1000 MIN -60 -60 -7 -1.5 -3.0 -2.0 -3.5 -10 -10 20000 3.0 V TYP. MAX UNIT V V V V V V V µA µA SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICBO ICEO hFE VD 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1389 Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3