2SB1411

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1411 DESCRIPTION ·With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation voltage APPLICATIONS ·Switching applications ·Hammer drive ,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -7 -2 -3 -0.5 20 UNIT V V V A A A W Tj Tstg Junction temperature Storage temperature 150 -55~150 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-5A; IB=-5mA IC=-5A; IB=-5mA VCB=-110V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-4V IC=-0.5A ; VCE=-12V f=1MHz;VCB=-10V 5000 MIN -110 2SB1411 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB TYP. MAX UNIT V -2.5 -3.0 -0.1 -0.1 V V mA mA 100 110 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=-5A IB1=-IB2=-5mA VCC=30V ,RL=6B 1.1 3.2 1.1 µs µs µs hFE Classifications O 5000-12000 p 6500-20000 Y 15000-30000 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1411 Fig.2 Outline dimensions 3