2SB1454

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1454 DESCRIPTION ·With TO-220F package ·Complement to type 2SD2202 ·Low collector saturation voltage: ·Large current capacity APPLICATIONS ·High current switching applications PINNING PIN 1 2 3 Emitter Collector Base Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -90 -80 -6 -5 -9 2.0 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE=< IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-3A ;IB=-0.3A VCB=-80V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-3A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 MIN -80 -90 -6 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT 2SB1454 TYP. MAX UNIT V V V -0.5 -0.1 -0.1 280 V mA mA 20 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-2.0A ;IB1=-IB2=-0.2A VCC=-50V ,RL=25D 0.2 0.7 0.2 µs µs µs hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1454 Fig.2 Outline dimensions 3