2SB1490

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1490 DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2250 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification ·Optimum for HiFi output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 3.5 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -160 -140 -5 -7 -12 90 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-6A ;IB=-6mA IC=-6A ;IB=-6mA VCB=-160V; IE=0 VCE=-140V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-6A ; VCE=-5V IC=-0.5A ; VCE=-10V;f=1MHz 2000 5000 MIN -140 2SB1490 SYMBOL V(BR)CEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V -2.5 -3.0 -100 -100 -100 V V µA µA µA 30000 20 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-6A ;IB1=-IB2=-6mA VCC=-50V 1.0 1.5 1.2 µs µs µs hFE-2 classifications Q 5000-150000 P 8000-30000 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1490 Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3