2SB1556

2SB1556

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2SB1556 - Silicon PNP Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2SB1556 数据手册
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1556 DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2385 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -140 -140 -5 -8 -0.1 120 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-7A ;IB=-7mA IC=-7A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-7A ; VCE=-5V IC=-12A ; VCE=-5V IE=0 ; VCB=-10V f=1MHz IC=-1A ; VCE=-5V 5000 2000 MIN -140 2SB1556 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT TYP. MAX UNIT V -2.5 -3.0 -5.0 -5.0 30000 V V µA µA 170 30 pF MHz hFE-2 classifications A 5000-12000 B 9000-18000 C 15000-30000 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1556 Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3
2SB1556
1. 物料型号:2SB1556,由SavantIC Semiconductor生产。

2. 器件简介: - 该晶体管为硅PNP功率晶体管。 - 采用TO-3PL封装。 - 与2SD2385型号互补。 - 具有高直流电流增益和低集电极饱和电压。 - 适用于达林顿配置。

3. 引脚分配: - 1号引脚:基极(Base) - 2号引脚:集电极,连接到安装底(Collector, connected to mounting base) - 3号引脚:发射极(Emitter)

4. 参数特性: - 绝对最大额定值: - VCBO(集电极-基极电压):-140V - VCEO(集电极-发射极电压):-140V - VEBO(发射极-基极电压):-5V - Ic(集电极电流):-8A - Is(基极电流):-0.1A - Pc(集电极功耗):120W - Tj(结温):150°C - Tstg(存储温度):-55°C至150°C

5. 功能详解: - 该晶体管适用于功率放大应用。 - 具有特定的直流电流增益(hFE-1和hFE-2),在不同的集电极电流下有不同的范围。 - 集电极输出电容(COB)和过渡频率(fr)也是其重要参数。

6. 应用信息: - 主要用于功率放大应用。

7. 封装信息: - 采用TO-3PL封装,具体尺寸如图2所示,未标明的公差为±0.50mm。
2SB1556 价格&库存

很抱歉,暂时无法提供与“2SB1556”相匹配的价格&库存,您可以联系我们找货

免费人工找货