2SB1556

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1556 DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2385 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -140 -140 -5 -8 -0.1 120 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-7A ;IB=-7mA IC=-7A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-7A ; VCE=-5V IC=-12A ; VCE=-5V IE=0 ; VCB=-10V f=1MHz IC=-1A ; VCE=-5V 5000 2000 MIN -140 2SB1556 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT TYP. MAX UNIT V -2.5 -3.0 -5.0 -5.0 30000 V V µA µA 170 30 pF MHz hFE-2 classifications A 5000-12000 B 9000-18000 C 15000-30000 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1556 Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3