2SB1567

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1567 DESCRIPTION ·With TO-220F package ·Complement to type 2SD2398 ·High DC current gain. ·DARLINGTON APPLICATIONS ·For power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -8 -2 -3 20 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SB1567 SYMBOL TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-5mA; IB=0 -100 V V(BR)CBO Collector-base breakdown voltage IC=-50µA; IE=0 -100 V VCEsat Collector-emitter saturation voltage IC=-1A ; IB=-1mA -1.5 V ICBO Collector cut-off current VCB=-100V;IE=0 -10 µA IEBO Emitter cut-off current VEB=-7V;IC=0 -3.0 mA hFE DC current gain IC=-1A ; VCE=-2V 1000 10000 COB Output capacitance IE=0 ; VCB=-10V;f=1MHz 35 pF 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1567 Fig.2 Outline dimensions 3