2SB1569

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1569 DESCRIPTION ·With TO-220F package ·High DC current gain ·Low collector saturation voltage ·Wide area of safe operation ·Complement to type 2SD2400 PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector MAX -120 -120 -5 -1.5 -3.0 2 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ;IB=0 IC=-50µA ;IE=0 IE=-50µA ;IC=0 IC=-1A ;IB=-0.1A IC=-1A ;IB=-0.1A VCB=-120V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IE=0.1A ; VCE=-5V,f=30MHz 60 MIN -120 -120 -5 2SB1569 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V V V -2.0 -1.5 -1.0 -1.0 320 30 50 V V µA µA pF MHz hFE Classifications D 60-120 E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1569 Fig.2 Outline dimensions 3