2SB1606

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1606 DESCRIPTION ·With TO-220F package ·Large collector current IC ·Low collector saturation voltage. ·Good linearity of hFE APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector dissipation 2 Tj Tstg Junction temperature Storage temperature 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -130 -80 -7 -5 -10 40 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA ; IB=0 IC=-4A ; IB=-0.2A IC=-4A ; IB=-0.2A VCB=-100V;IE=0 VEB=-5V;IC=0 IC=-0.1A ; VCE=-2V IC=-2A ; VCE=-2V IC=-0.5A ; VCE=-10V;f=10MHz 45 90 MIN -80 2SB1606 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V -0.5 -1.5 -10 -50 V V µA µA 260 30 MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-2A; IB1=-IB2=-0.2A 0.13 0.5 0.13 µs µs µs hFE-2 classifications Q 90-180 P 130-260 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1606 Fig.2 Outline dimensions 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1606 4