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2SB1657

2SB1657

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2SB1657 - Silicon PNP Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2SB1657 数据手册
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1657 DESCRIPTION ·With TO-126 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For audio frequency amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Ta=25 PT Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -30 -30 -6 -5 -8 -1 0.1 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-10mA ;IB=0 IC=-0.5A; IB=-25mA IC=-1A; IB=-50mA IC=-2A; IB=-100mA IC=-3A; IB=-75mA IC=-1A; IB=-50mA VCB=-30V; IE=0 VEB=-6V; IC=0 IC=-0.5A ; VCE=-2V IC=-3A ; VCE=-2V IC=-50mA ; VCE=-10V IE=0;f=1MHz ; VCB=-10V 150 70 MIN -30 2SB1657 SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VCEsat-3 VCEsat-4 VBEsat ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -0.15 -0.25 -0.40 -1.0 -1.5 -0.1 -0.1 600 V V V V V µA µA 75 60 MHz pF 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1657 Fig.2 Outline dimensions 3
2SB1657
物料型号: - 型号:2SB1657

器件简介: - 2SB1657是一款硅PNP功率晶体管,具有TO-126封装,低集电极饱和电压和高直流电流增益。

引脚分配: - 1号引脚:发射极(Emitter) - 2号引脚:集电极,连接到安装底(Collector; connected to mounting base) - 3号引脚:基极(Base)

参数特性: - 绝对最大额定值: - 集电极-基极电压(VCBO):-30V,开发射极 - 集电极-发射极电压(VCEO):-30V,开基极 - 发射极-基极电压(VEBO):-6V,开集电极 - 集电极电流(Ic):-5A,直流 - 集电极峰值电流(ICM):-8A - 基极电流(IB):-1A,直流 - 总功率耗散(PT):0.1W,Ta=25°C;10W,Tc=25°C - 结温(Tj):150°C - 储存温度(Tstg):-55°C至150°C

功能详解: - 该晶体管适用于音频频率放大和开关应用。 - 特性参数包括集电极-发射极击穿电压、集电极-发射极饱和电压、基极-发射极饱和电压、集电极截止电流、发射极截止电流、直流电流增益、转换频率和集电极输出电容。

应用信息: - 用于音频频率放大和开关应用。

封装信息: - 封装类型:TO-126 - 提供了TO-126封装的简化外形图和符号。
2SB1657 价格&库存

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