2SB1658

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1658 DESCRIPTION ·With TO-126 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For audio frequency amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) Ta=25 PT Total power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 10 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE -30 -30 -6 -5 -10 -2 0.1 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SB1658 SYMBOL TYP. MAX UNIT V(BR)CEO VCEsat-1 VCEsat-2 VCEsat-3 VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Collector-emitter breakdown voltage IC=-10mA ;IB=0 IC=-1A; IB=-50mA IC=-2A; IB=-100mA IC=-4A; IB=-200mA IC=-1A; IB=-100mA VCB=-30V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-2V IC=-4A ; VCE=-2V IC=-50mA ; VCE=-10V IE=0;f=1MHz ; VCB=-10V -30 V Collector-emitter saturation voltage -0.15 V Collector-emitter saturation voltage -0.25 V Collector-emitter saturation voltage -0.5 V Base-emitter saturation voltage -1.5 V Collector cut-off current -0.1 µA Emitter cut-off current -0.1 µA DC current gain 150 600 DC current gain 50 Transition frequency 95 MHz Collector output capacitance 100 pF 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1658 Fig.2 Outline dimensions 3