2SB337

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB337 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage APPLICATIONS ·For audio frequency power output applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IE IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Base current Collector power dissipation Junction temperature Storage temperature TC-55 CONDITIONS Open emitter Open base Open collector VALUE -40 -30 -10 -7 7 -1 30 100 -55~100 UNIT V V V A A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB337 SYMBOL MAX UNIT V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE Collector-emitter breakdown voltage IC=-10mA; IB=0 IE=-1mA; IC=0 IC=-4A; IB=-0.4A IC=-1A ;VCE=-2V VCB=-30V; IE=0 VEB=-10V; IE=0 IC=-1A ; VCE=-2V -30 V Emitter-base breakdown voltage -10 V Collector-emitter saturation voltage -0.29 V Base-emittter on voltage -0.38 V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 50 90 165 hFE Classifications A 50-100 B 80-165 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB337 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3