2SB506

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB506 DESCRIPTION ·With TO-3 package ·Wide area of safe operation APPLICATIONS ·Low frequency power amplification ·Power switching application PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -100 -7 -5 60 100 -55~100 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IE=-1mA; IC=0 IC=-5A; IB=-0.5A IC=-5A; IB=-0.5A VCB=-100V; IE=0 VEB=-7V; IC=0 IC=-1A ; VCE=-5V IC=-0.3A ; VCE=-10V 35 MIN -100 -7 2SB506 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V -1.0 -1.5 -0.1 -0.1 200 20 V V mA mA MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB506 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3