2SB509

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB509 DESCRIPTION ·With TO-66 package ·Complement to type 2SD315 APPLICATIONS ·For use in audio frequency power amplifier application PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -5 -4 -10 35 150 -40~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB509 SYMBOL MAX UNIT V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT Collector-emitter breakdown voltage IC=-10mA ;IB=0 IC=-2A; IB=-0.2A IC=-1A ; VCE=-2V VCB=-20V; IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-0.1A ; VCE=-2V IC=-0.5A ; VCE=-5V -60 V Collector-emitter saturation voltage -1.0 V Base-emitter on voltage -1.5 V Collector cut-off current -0.1 mA Emitter cut-off current -1.0 mA DC current gain 40 320 DC current gain 40 Transition frequency 8 MHz hFE-1 Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB509 Fig.2 outline dimensions 3