2SB531

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB531 DESCRIPTION ·With TO-3 package ·Complement to type 2SD371 ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for 30W high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -100 -5 -6 6 50 150 -65~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB531 SYMBOL MAX UNIT V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 COB fT Collector-emitter breakdown voltage IC=-100mA ;IB=0 IE=-10mA ;IC=0 IC=-4A; IB=-0.4A IC=-4A ; VCE=-5V VCB=-50V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IE=0 ; VCB=-10V;f=1.0MHz IC=-1A ; VCE=-5V -100 V Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -2.0 V Base-emitter on voltage -1.5 V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 40 240 DC current gain 20 Output capacitance 180 pF Transition frequency 8 MHz hFE-1 Classifications R 40-80 O 70-140 Y 120-240 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB531 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3