2SB532

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB532 DESCRIPTION ·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -80 -80 -5 -5 60 150 -65~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SB532 SYMBOL MAX UNIT V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE -2 fT Collector-emitter breakdown voltage IC=-30mA ;IB=0 IE=-1mA ;IC=0 IC=-4A; IB=-0.4A IC=-4A ; VCE=-5V VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-4A ; VCE=-4V IC=-1A ; VCE=-4V -80 V Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -2.0 V Base-emitter on voltage -1.5 V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 80 DC current gain 20 Transition frequency 10 MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB532 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3