2SB609

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB609 DESCRIPTION ·With TO-66 package ·Wide area of safe operation APPLICATIONS ·For use in audio frequency power amplifier application PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -80 -5 -4 40 150 -40~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN 2SB609 SYMBOL TYP. MAX UNIT V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE Collector-emitter breakdown voltage IC=-10mA ;IB=0 IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-2A; IB=-0.2A IC=-0.5A ; VCE=-4V VCB=-80V; IE=0 VEB=-4V; IC=0 IC=-0.5A ; VCE=-4V -80 V Collector-base breakdown voltage -100 V Emitter-base breakdown voltage -5 V Collector-emitter saturation voltage -1.0 V Base-emitter on voltage -1.5 V Collector cut-off current -0.1 mA Emitter cut-off current -0.1 mA DC current gain 60 320 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB609 Fig.2 outline dimensions 3