2SB676

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB676 DESCRIPTION ·With TO-220C package ·High DC Current Gain : hFE=2000 @VCE=-2V, IC=-1A (Min.) ·DARLINGTON APPLICATIONS ·For switching applications ·Hammer drive, pulse motor drive applications ·Power amplifier applications PINNING PIN 1 2 3 Base Collector; connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-DC Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -100 -80 -5 -4 30 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA, IB=0 IC=-3A ,IB=-6mA IC=-3A ,IB=-6mA VCB=-100V, IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-2V IC=-3A ; VCE=-2V 2000 1000 MIN -80 2SB676 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V -1.5 -2.0 -20 -2.5 V V µA mA Switching times ton ts tf Turn-on time Storage time Fall time VCE=-30V, IB1=-IB2=-6mA RL=10@ 0.15 0.80 0.40 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB676 Fig.2 Outline dimensions 3