2SB689

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB689 DESCRIPTION ·With TO-220C package ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·For low frequency power amplifier, TV vertical deflection ouptut applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.8 150 -45~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -4 -4 -5 40 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-10mA; RBE=< IE=-1mA; IC=0 IC=-1A;IB=-0.1 A VCE=-80V; RBE=< VEB=-3.5V; IC=0 IC=-0.5A ; VCE=-4V IC=-50mA ; VCE=-4V 50 25 MIN -100 -4 2SB689 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICEO IEBO hFE-1 hFE-2 TYP. MAX UNIT V V -1.0 -100 -50 250 350 V µA µA 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB689 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3