2SB707

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB707 2SB708 DESCRIPTION ·With TO-220C package ·Complement to type 2SD568/569 APPLICATIONS ·For low frequency power amplifier low speed switching industrial use PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SB707 VCEO Collector-emitter voltage 2SB708 VEBO IC ICM IB Emitter-base voltage Collector current Collector current-peak Base current Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 Open collector Open base -80 -7 -7 -15 -3.5 1.5 W V A A A CONDITIONS Open emitter VALUE -80 -60 V UNIT V SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SB707 V(BR)CEO Collector-emitter breakdown voltage 2SB708 VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain IC=-5A;IB=-0.5 A IC=-5A;IB=-0.5 A VCB=-60V; IE=0 VEB=-5V; IC=0 IC=-3A ; VCE=-1V IC=-5A ; VCE=-1V IC=-10mA; IB=0 CONDITIONS 2SB707 2SB708 SYMBOL MIN -60 TYP. MAX UNIT V -80 -0.5 -1.5 -10 -10 40 20 200 V V µA µA hFE-2 classifications R 40-80 O 60-120 Y 100-200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB707 2SB708 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3