2SB760

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB760 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD855 APPLICATIONS ·For audio frequency and radio frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -60 -60 -5 -1 30 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-10mA IB=0 IC=-1mA; IE=0 IE=-1mA; IC=0 IC=-1A; IB=-0.1A IC=-1A; IB=-0.1A VCB=-60V; IE=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-4V 40 MIN -60 -60 -5 2SB760 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V V -1.0 -1.5 -100 -100 450 V V µA µA 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB760 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3