2SB775

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB775 DESCRIPTION ·With TO-3PN package ·Complement to type 2SD895 ·Wide area of safe operation ·Large current capability APPLICATIONS ·85V/6A, AF 35W output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -85 -6 -6 -10 60 150 -40~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;RBE=> IC=-5mA ;IE=0 IE=-5mA ;IC=0 IC=-4A ;IB=-0.4A IC=-1A;VCE=-5V VCB=-40V IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-5V IC=-3A ; VCE=-5V IC=-1A ; VCE=-5V f=1MHz;VCB=10V 60 20 MIN -85 -100 -6 2SB775 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V V V -1.4 -2.0 -1.5 -0.1 -0.1 200 V V mA mA 18 160 MHz pF Switching times ton tstg tf Turn-on time Storage time Fall time IC=-1.0A; IB1=-IB2=-0.1A RL=20D;VCC=-20V 0.12 1.29 0.36 µs µs µs hFE-1 Classifications D 60-120 E 100-200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB775 Fig.2 outline dimensions 3