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2SB826

2SB826

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2SB826 - Silicon PNP Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2SB826 数据手册
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB826 DESCRIPTION ·With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD1062 ·Wide area of safe operation APPLICATIONS ·Relay drivers, ·High-speed inverters, converters ·General high-current switching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -6 -12 -15 40 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE=: IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-6A;IB=-0.3A VCB=-40V;IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-5A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 10 MIN -50 -60 -6 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT 2SB826 TYP. MAX UNIT V V V -0.5 -0.1 -0.1 280 V mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=5.0A ;IB1=- IB2=0.5A 0.2 0.1 0.4 µs µs µs hFE-1 classifications Q 70-140 R 100-200 S 140-280 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB826 Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB826 4
2SB826
1. 物料型号: - 型号:2SB826

2. 器件简介: - 2SB826是一款硅PNP功率晶体管,采用TO-220封装,具有低集电极饱和电压,是2SD1062型号的互补类型,拥有广泛的安全工作区域。

3. 引脚分配: - 1号引脚:发射极(Emitter) - 2号引脚:集电极,连接到安装底座(Collector; connected to mounting base) - 3号引脚:基极(Base)

4. 参数特性: - 集电极-基极电压(VCBO):-60V - 集电极-发射极电压(VCEO):-50V - 发射极-基极电压(VEBO):-6V - 集电极电流(IC):-12A(直流),-15A(脉冲) - 集电极功耗(PC):40W - 结温(Tj):150°C - 存储温度(Tstg):-55°C至150°C

5. 功能详解: - 2SB826适用于继电器驱动、高速逆变器、转换器以及一般高电流开关应用。

6. 应用信息: - 继电器驱动、高速逆变器、转换器、一般高电流开关应用。

7. 封装信息: - 封装类型:TO-220C - 封装图示和尺寸图已提供,未标注的公差为±0.10mm。
2SB826 价格&库存

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