2SB828

2SB828

  • 厂商:

    SAVANTIC

  • 封装:

  • 描述:

    2SB828 - Silicon PNP Power Transistors - Savantic, Inc.

  • 详情介绍
  • 数据手册
  • 价格&库存
2SB828 数据手册
SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB828 DESCRIPTION ·With TO-3PN package ·Complement to type 2SD1064 ·Low collector saturation voltage ·Wide area of safe operation APPLICATIONS ·Relay drivers,high-speed inverters, converters,and other general highcurrent switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -60 -50 -6 -12 -17 80 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE=< IC=-1mA ;IE=0 IE=-1mA ;IC=0 IC=-6A ;IB=-0.3A VCB=-40V IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-5A ; VCE=-2V IC=-1A ; VCE=-5V 70 30 10 MIN -50 -60 -6 TYP. 2SB828 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT MAX UNIT V V V -0.5 -0.1 -0.1 280 V mA mA MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-5.0A; IB1=-IB2=-0.5A RL=4C;VCC=-20V 0.2 0.1 0.4 µs µs µs hFE-1 Classifications Q 70-140 R 100-200 S 140-280 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB828 Fig.2 outline dimensions 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB828 4
2SB828
物料型号: - 型号为2SB828。

器件简介: - 2SB828是一款硅PNP功率晶体管,采用TO-3PN封装,是2SD1064型号的互补类型,具有低集电极饱和电压和广泛的安全工作区域。

引脚分配: - 引脚1:基极(Base) - 引脚2:集电极,连接到安装底(Collector; connected to mounting base) - 引脚3:发射极(Emitter)

参数特性: - 集电极-基极电压(VCBO):-60V,开发射极 - 集电极-发射极电压(VCEO):-50V,开基极 - 发射极-基极电压(VEBO):-6V,开集电极 - 集电极电流(Ic):-12A - 集电极峰值电流(ICM):-17A - 集电极功耗(Pc):80W,Tc=25°C - 结温(Tj):150°C - 存储温度(Tstg):-55~150°C

功能详解: - 该晶体管具有低集电极发射极饱和电压,适用于继电器驱动器、高速逆变器、转换器等一般高电流开关应用。

应用信息: - 适用于继电器驱动器、高速逆变器、转换器等一般高电流开关应用。

封装信息: - 封装类型为TO-3PN,具体尺寸和外形图可以参考文档中的图2。
2SB828 价格&库存

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