2SB849A

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB849A DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1110A ·Wide area of safe operation APPLICATIONS ·For use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -130 -130 -7 -7 80 150 -55~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ;IB=0 IC=-5A ;IB=-0.5A IC=-5A ;IB=-0.5A VCB=-120V; IE=0 VEB=-6V; IC=0 IC=-20mA ; VCE=-5V IC=-1A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.2A ; VCE=-5V 20 40 MIN -130 2SB849A SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE -2 COB fT TYP. MAX UNIT V -2.0 -2.0 -50 -50 V V µA µA 200 340 14 pF MHz 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB849A Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3