2SB856

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB856 DESCRIPTION ·With TO-220C package ·Low collector saturation voltage APPLICATIONS ·Low frequency power amplifier PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -50 -50 -4 -3 25 150 -45~150 UNIT V V V A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-50mA; RBE=6 IC=-5mA; IE=0 IE=-5mA; IC=0 IC=-2 A;IB=-0.2 A IC=-1A ; VCE=-4V VCB=-20V; IE=0 IC=-1A ; VCE=-4V IC=-0.1A ; VCE=-4V IC=-0.5A ; VCE=-4V 35 35 35 MIN -50 -50 -4 TYP. 2SB856 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 fT MAX UNIT V V V -1.2 -1.5 -100 200 V V µA MHz hFE-1 classifications A 35-70 B 60-120 C 100-200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB856 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3