2SB861

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB861 DESCRIPTION ·With TO-220C package ·Complement to type 2SD1138 APPLICATIONS ·Low frequency power amplifier color TV vertical deflection output PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 30 150 -45~150 CONDITIONS Open emitter Open base Open collector VALUE -200 -150 -6 -2 -5 1.8 W UNIT V V V A A SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current DC current gain DC current gain Output capacitance CONDITIONS IC=-50mA; RBE=: IE=-5mA; IC=0 IC=-0.5 A;IB=-50m A IC=-50mA ; VCE=-4V VCB=-120V; IE=0 IC=-50mA ; VCE=-4V IC=-0.5A ; VCE=-10V IE=0 ;VCB=-100V,f=1MHz 60 60 30 MIN -150 -6 TYP. 2SB861 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO hFE-1 hFE-2 COB MAX UNIT V V -3.0 -1.0 -1 200 V V µA pF hFE-1 classifications B 60-120 C 100-200 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB861 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB861 4