2SB863

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB863 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SD1148 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -140 -140 -5 -10 -1 100 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA; IB=0 IC=-5.0A ;IB=-0.5A IC=-5A ; VCE=-5V VCB=-140V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-5A ; VCE=-5V IC=-1A ; VCE=-10V IC=0;f=1MHz ; VCB=-10V 55 25 15 MIN -140 2SB863 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V -0.60 -0.96 -2.0 -1.5 -5.0 -5.0 160 V V µA µA MHz pF 400 hFE-1 Classifications R 55-110 O 80-160 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB863 Fig.2 Outline dimensions (unindicated tolerance: ±0.10 mm) 3 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB863 4